IXTA3N100D2HV Datasheet - IXYS

IXTA3N100D2HV - Power MOSFET

High Voltage Depletion Mode Power MOSFET IXTA3N100D2HV D VDSX = ID(on) >  RDS(on) 1000V 3A 6 N-Channel G S Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C Continuous Transient Maximum Ratings 1000 V 20 V 30 V TC = 25C 125 W - 55 +150 C 150 C - 55 +150 C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 °C 260 °C Mounting Force 10..65 / 2.2..14.6 N/lb 2.5 g Symbol Test Conditions

IXTA3N100D2HV Features

* High Blocking Voltage

* Normally ON Mode

*  High Voltage package Advantages

* Easy to Mount

* Space Savings

* High Power Density Applications

* Audio Amplifiers

* Start-Up Circuits

* Protection Circuits

* Ramp Generato

IXTA3N100D2HV-IXYS.pdf