IXTA32P05T Datasheet - IXYS

IXTA32P05T - Power MOSFET

TrenchPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTY32P05T IXTA32P05T IXTP32P05T Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220) TO-252 TO-263 TO-220 Maximum Ratings - 50 V - 50 V .

IXTA32P05T Features

* International Standard Packages

* Avalanche Rated

* Extended FBSOA

* Fast Intrinsic Diode

* Low RDS(ON) and QG Advantages

* Easy to Mount

* Space Savings

* High Power Density Applications

* High-Side Switching

* Push Pull Amplifiers

* DC Choppers