IXTA3N120 - Power MOSFET
High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTA3N120 IXTP3N120 IXTH3N120 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 1200 V 1200 V 20 V 30 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150C TC = 25C 3 12 3 700 5 200 -55 +150 150 -55 +150 .
IXTA3N120 Features
* International Standard Packages
* High Voltage Package
* Fast Intrinsic Diode
* Avalanche Rated
* Molding Epoxies meet UL 94 V-0
Flammability Classification
* High Blocking Voltage
Advantages
* Easy to Mount
* Space Savings
* High Power Density
Applications