IXTA3N120 Datasheet, Mosfet, IXYS Corporation

IXTA3N120 Features

• Mosfet
• International Standard Packages
• High Voltage Package
• Fast Intrinsic Diode
• Avalanche Rated
• Molding Epoxies meet UL 94 V-0 Flammability C

PDF File Details

Part number:

IXTA3N120

Manufacturer:

IXYS Corporation

File Size:

175.61kb

Download:

📄 Datasheet

Description:

Power mosfet.

IXTA3N120 Application

• Applications
• High Voltage Power Supplies
• Capacitor Discharge Applications
• Pulse Circuits © 2015 IXYS CORPORATION, All

TAGS

IXTA3N120

IXYS Corporation

📁 Related Datasheet

IXTA3N120HV - High Voltage Power MOSFET (IXYS)
High Voltage Power MOSFET IXTA3N120HV N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv.

IXTA3N100D2 - MOSFET (IXYS)
Depletion Mode MOSFET IXTA3N100D2 IXTP3N100D2 N-Channel D G S Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C t.

IXTA3N100D2HV - Power MOSFET (IXYS)
High Voltage Depletion Mode Power MOSFET IXTA3N100D2HV D VDSX = ID(on) >  RDS(on) 1000V 3A 6 N-Channel G S Symbol VDSX VGSX VGSM PD TJ TJM Tst.

IXTA3N100P - MOSFET (IXYS)
PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA3N100P IXTP3N100P IXTH3N100P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD.

IXTA3N110 - (IXTx3N1x0) High Voltage Power MOSFETs (IXYS Corporation)
.. High Voltage Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary Data Sheet VDSS ID25 3A 3A RDS(o.

IXTA3N150HV - High Voltage Power MOSFET (IXYS)
High Voltage Power MOSFET IXTA3N150HV N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv.

IXTA3N50D2 - N-Channel MOSFET (IXYS Corporation)
Depletion Mode MOSFET N-Channel IXTA3N50D2 IXTP3N50D2 D VDSX = ID(on) >  RDS(on) 500V 3A 1.5 G S Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD .

IXTA3N50P - Power MOSFET (IXYS Corporation)
PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY3N50P IXTA3N50P IXTP3N50P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ.

IXTA3N60P - Power MOSFET (IXYS)
PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY3N60P IXTA3N60P IXTP3N60P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ.

IXTA3N60P - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 2.9Ω@VGS=10V ·Fully characterized avalanche voltage and curre.