IXTA3N150HV Datasheet - IXYS

IXTA3N150HV, High Voltage Power MOSFET

High Voltage Power MOSFET IXTA3N150HV N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv.

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IXTA3N150HV-IXYS.pdf

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Datasheet Details

Part number:

IXTA3N150HV

Manufacturer:

IXYS

File Size:

163.30 KB

Description:

High Voltage Power MOSFET

Features

* High Voltage package
* Fast Intrinsic Diode
* Avalanche Rated
* Molding Epoxies meet UL 94 V-0 Flammability Classification
* High Blocking Voltage Advantages
* Easy to Mount
* Space Savings

Applications

* High Voltage Power Supplies
* Capacitor Discharge Applications
* Pulse Circuits © 2018 IXYS CORPORATION, All Rights Reserved DS100523B(1/18) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 20V, ID = 0.5
* ID25, Note 1 Ciss Coss Crss VGS = 0V, V

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IXTA3N150HV High Voltage Power MOSFET IXYS

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