IXTA3N110 Datasheet - IXYS Corporation

IXTA3N110, (IXTx3N1x0) High Voltage Power MOSFETs

www.DataSheet4U.com High Voltage Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary Data Sheet VDSS ID25 3A 3A RDS(o.

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IXTA3N110_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXTA3N110

Manufacturer:

IXYS Corporation

File Size:

175.61 KB

Description:

(IXTx3N1x0) High Voltage Power MOSFETs

Features

* l l l G DS TO-263 (IXTA) G S D (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6 mm (0.063 in) from case for 10 s Mounting torque (TO-220) TO-220 TO-263 300 1.13/10 Nm/lb. in. 4 2 g g l International standard packages Low RDS (on) Rated for unclamped Inductive load Switching (UIS) Moldi

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IXTA3N110 IXTx3N1x0 High Voltage Power MOSFETs IXYS Corporation

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