* l l l G DS TO-263 (IXTA) G S D (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6 mm (0.063 in) from case for 10 s Mounting torque (TO-220) TO-220 TO-263 300 1.13/10 Nm/lb.in. 4 2 g g l International standard packages Low RDS (on) Rated for unclamped Inductive load Switching (UIS) Moldi
IXTA3N110 Datasheet (175.61 KB)
IXTA3N110
IXYS Corporation
175.61 KB
(ixtx3n1x0) high voltage power mosfets.
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High Voltage Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated, High dv/dt
Preliminary Data Sheet
VDSS
ID25 3A 3A
RDS(o.
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