www.DataSheet4U.com High Voltage Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary Data Sheet VDSS ID25 3A 3A RDS(on) 4.5 Ω 4.0 Ω IXTA/IXTP 3N120 IXTA/IXTP 3N110 1200 V 1100 V Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°
Datasheet Details
Part number:
IXTA3N110
Manufacturer:
IXYS Corporation
File Size:
175.61 KB
Description:
(ixtx3n1x0) high voltage power mosfets.