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IXTA3N120HV Datasheet - IXYS

IXTA3N120HV - High Voltage Power MOSFET

High Voltage Power MOSFET IXTA3N120HV N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Maximum Ratings 1200 V 1200 V 20 V

IXTA3N120HV Features

* High Voltage Package

* Fast Intrinsic Diode

* Avalanche Rated

* Molding Epoxies meet UL 94 V-0 Flammability Classification

* High Blocking Voltage Advantages

* Easy to Mount

* Space Savings

* High Power Density Applications

* High Voltage Power Supplies

* Ca

IXTA3N120HV-IXYS.pdf

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Datasheet Details

Part number:

IXTA3N120HV

Manufacturer:

IXYS

File Size:

152.21 KB

Description:

High voltage power mosfet.

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IXTA3N120HV High Voltage Power MOSFET IXYS