IXTA3N60P Datasheet (IXYS)

IXTA3N60P, Power MOSFET

PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY3N60P IXTA3N60P IXTP3N60P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 600 V 600 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 3 6 3 100 5 70 -55 +150 150 -55 +150 A A A mJ V/ns W C C C Max

IXTA3N60P Features

* International Standard Packages

* Low QG

* Avalanche Rated

* Low Package Inductance

* Fast Intrinsic Rectifier Advantages

* High Power Density

* Easy to Mount

* Space Savings Applications

* DC-DC Converters

* Switch-Mode and Resonant-Mode Power Supplies