Part number:
IXTA3N60P
Manufacturer:
INCHANGE
File Size:
250.97 KB
Description:
N-channel mosfet.
* Static drain-source on-resistance: RDS(on) ≤ 2.9Ω@VGS=10V
* Fully characterized avalanche voltage and current
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* APPLICATION
* DC/DC Converter
* Ideal for high-frequenc
IXTA3N60P Datasheet (250.97 KB)
IXTA3N60P
INCHANGE
250.97 KB
N-channel mosfet.
📁 Related Datasheet
IXTA3N60P Power MOSFET (IXYS)
IXTA3N100D2 MOSFET (IXYS)
IXTA3N100D2HV Power MOSFET (IXYS)
IXTA3N100P MOSFET (IXYS)
IXTA3N110 (IXTx3N1x0) High Voltage Power MOSFETs (IXYS Corporation)
IXTA3N120 Power MOSFET (IXYS Corporation)
IXTA3N120HV High Voltage Power MOSFET (IXYS)
IXTA3N150HV High Voltage Power MOSFET (IXYS)
IXTA3N50D2 N-Channel MOSFET (IXYS Corporation)
IXTA3N50P Power MOSFET (IXYS Corporation)