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IXTA3N60P

N-Channel MOSFET

IXTA3N60P Features

* Static drain-source on-resistance: RDS(on) ≤ 2.9Ω@VGS=10V

* Fully characterized avalanche voltage and current

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* APPLICATION

* DC/DC Converter

* Ideal for high-frequenc

IXTA3N60P Datasheet (250.97 KB)

Preview of IXTA3N60P PDF

Datasheet Details

Part number:

IXTA3N60P

Manufacturer:

INCHANGE

File Size:

250.97 KB

Description:

N-channel mosfet.

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IXTA3N60P N-Channel MOSFET INCHANGE

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