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IXTC110N055T Datasheet - IXYS

IXTC110N055T Power MOSFET

Preliminary Technical Information TrenchMVTM IXTC110N055T Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 55 V 78 A 9.0 mΩ Symbol V DSS VDGR VGSM ID25 ILRMS I DM IAR EAS dv/dt P D TJ TJM Tstg TL T SOLD VISOL FC Weight Test Conditions T J = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient Maximum Ratings 55 V 55 V ± 20 V TC = 25°C Package Current Limit, RMS T C = 25°C, pulse width limited by T .

IXTC110N055T Features

* Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - High Side Switch - 12V Battery - ABS Systems DC/DC C

IXTC110N055T Datasheet (140.36 KB)