* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Mounting Surface
* 4500V~ Electrical Isolation
* Molding Epoxies meet UL 94 V-0 Flammability Classification Advantages
* High Voltage Package
* Easy to Mount
* Space Savings
* High Power Density Applicati
IXTF02N450 Datasheet (164.67 KB)
IXTF02N450
IXYS
164.67 KB
High voltage power mosfet.
Preliminary Technical Information High Voltage Power MOSFET IXTF02N450 VDSS I D25 RDS(on) = 4500V = 200mA 625 (Electrically Isolated Tab) N-.
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