IXTF02N450 Datasheet - IXYS

IXTF02N450 High Voltage Power MOSFET

Preliminary Technical Information High Voltage Power MOSFET IXTF02N450 VDSS I D25 RDS(on) = 4500V = 200mA  625 (Electrically Isolated Tab) N-Channel Enhancement Mode ISOPLUS i4-PakTM Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD FC VISOL Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 4500 V 4500 V 20 V 30 V TC = 25C TC = 25C, Pulse Width Limited by TJM 200 mA 600 mA TC = 25C 78 W - 55 .

IXTF02N450 Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate

* Isolated Mounting Surface

* 4500V~ Electrical Isolation

* Molding Epoxies meet UL 94 V-0 Flammability Classification Advantages

* High Voltage Package

* Easy to Mount

* Space Savings

* High Power Density Applicati

IXTF02N450 Datasheet (164.67 KB)

IXTF02N450 Datasheet Preview — Preview of IXTF02N450 PDF

Datasheet Details

Part number:

IXTF02N450

Manufacturer:

IXYS

File Size:

164.67 KB

Description:

High voltage power mosfet.

📁 Related Datasheet

IXTF1N400 High Voltage Power MOSFET (IXYS)

IXTF1N450 High Voltage Power MOSFET (IXYS)

IXTA02N250 High Voltage Power MOSFET (IXYS)

IXTA02N250HV High Voltage Power MOSFET (IXYS)

IXTA02N450HV High Voltage Power MOSFETs (IXYS)

IXTA05N100 Power MOSFET (IXYS Corporation)

IXTA05N100 N-Channel MOSFET (INCHANGE)

IXTA05N100HV Power MOSFET (IXYS)

TAGS

IXTF02N450 High Voltage Power MOSFET IXYS

IXTF02N450 Distributor