IXTF1N450 Datasheet - IXYS

IXTF1N450, High Voltage Power MOSFET

High Voltage Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode IXTF1N450 VDSS ID25 RDS(on) = 4500V = 0.9A  80 ISOPLUS i4-PakT

Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Mounting Surface
* 4500V~ Electrical Isolation
* Molding Epoxies meet UL 94 V-0 Flammability Classification Advantages
* High Voltage Package
* Easy to Mount
* Space Savings
* High Power Density Applicati

Applications

* High Voltage Power Supplies
* Capacitor Discharge Applications
* Pulse Circuits
* Laser and X-Ray Generation Systems © 2013 IXYS CORPORATION, All Rights Reserved DS100501D(10/13) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 50V, ID = 200mA, Note 1

IXTF1N450-IXYS.pdf