IXTF1N450 High Voltage Power MOSFET

IXYS

Description

High Voltage Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode IXTF1N450 VDSS ID25 RDS(on) = 4500V = 0.9A  80 ISOPLUS i4-PakT.

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Datasheet Specifications

Part number: IXTF1N450
Manufacturer: IXYS
File Size: 148.47 KB
Datasheet: IXTF1N450-IXYS.pdf
Description: High Voltage Power MOSFET

Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Mounting Surface
* 4500V~ Electrical Isolation
* Molding Epoxies meet UL 94 V-0 Flammability Classification Advantages
* High Voltage Package
* Easy to Mount
* Space Savings
* High Power Density Applicati

Applications

* High Voltage Power Supplies
* Capacitor Discharge Applications
* Pulse Circuits
* Laser and X-Ray Generation Systems © 2013 IXYS CORPORATION, All Rights Reserved DS100501D(10/13) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 50V, ID = 200mA, Note 1

IXTF1N450 Distributors

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IXTF1N450 High Voltage Power MOSFET IXYS

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