IXTH13N80, IXTH11N80 MegaMOS FET

IXYS

Description

MegaMOSTMFET N-Channel Enhancement Mode VDSS IXTH / IXTM 11N80 800 V IXTH / IXTM 13N80 800 V ID25 11 A 13 A RDS(on) 0.95 Ω 0.80 Ω Symbol Test Con.

📥 Download Datasheet

IXTH13N80 Datasheet Preview — This datasheet PDF includes multiple part numbers: IXTH13N80, IXTH11N80. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: IXTH13N80, IXTH11N80
Manufacturer: IXYS
File Size: 64.72 KB
Datasheet: IXTH11N80-IXYS.pdf
Description: MegaMOS FET
Note: This datasheet PDF includes multiple part numbers: IXTH13N80, IXTH11N80.
Please refer to the document for exact specifications by model.

Features

* q International standard packages q Low R HDMOSTM process DS (on) q Rugged polysilicon gate cell structure q Low package inductance (< 5 nH) - easy to drive and to protect q Fast switching times Symbol V DSS VGS(th) IGSS IDSS R DS(on) Test Conditions Characteristic Values (T J = 25°C,

Applications

* q Switch-mode and resonant-mode power supplies q Motor controls q Uninterruptible Power Supplies (UPS) q DC choppers Advantages q Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) q Space savings q High power density IXYS reserves the right to change limits, test conditions, and di

IXTH13N80 Distributors

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IXTH11N80 MegaMOS FET IXYS

IXYS IXTH13N80-like datasheet