Datasheet Specifications
- Part number
- IXTH4N150
- Manufacturer
- IXYS
- File Size
- 121.06 KB
- Datasheet
- IXTH4N150-IXYS.pdf
- Description
- High Voltage Power MOSFET
Description
High Voltage Power MOSFET IXTH4N150 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/d.
Applications
* z High Voltage Power Supplies z Capacitor Discharge Applications z Pulse Circuits © 2012 IXYS CORPORATION, All Rights Reserved DS100287B(10/12) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs VDS = 20V, ID = 0.5IXTH4N150 Distributors
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