IXTH4N150 Datasheet - IXYS

IXTH4N150 High Voltage Power MOSFET

High Voltage Power MOSFET IXTH4N150 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque Maximum Ratings 1500 V 1500 V ±30 V .

IXTH4N150 Features

* z International Standard Package z Fast Intrinsic Diode z Avalanche Rated z Molding Epoxies meet UL 94 V-0 Flammability Classification Advantages z Easy to Mount z Space Savings z High Power Density Applications z High Voltage Power Supplies z Capacitor Discharge Applications z Pulse Circuits © 201

IXTH4N150 Datasheet (121.06 KB)