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IXTI12N50P Datasheet - IXYS

IXTI12N50P Power MOSFET

PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA12N50P IXTI12N50P IXTP12N50P VDSS = ID25 = ≤RDS(on) 500V 12A 500mΩ TO-263 (IXTA) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062) from case for 10s Plastic body for 10s Mountin.

IXTI12N50P Features

* z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance easy to drive and to protect Advantages z Easy to mount z Space savings z High power density © 2008 IXYS CORPORATION, All rights reserved DS99322F(04/08) Symbol Test Conditions (TJ = 25°C, un

IXTI12N50P Datasheet (153.45 KB)