* z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance easy to drive and to protect Advantages z Easy to mount z Space savings z High power density © 2008 IXYS CORPORATION, All rights reserved DS99322F(04/08) Symbol Test Conditions (TJ = 25°C, un
IXTI12N50P Datasheet (153.45 KB)
IXTI12N50P
IXYS
153.45 KB
Power mosfet.
PolarTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA12N50P IXTI12N50P IXTP12N50P
VDSS = ID25 = ≤RDS(on)
500V 12A 500mΩ
TO-263 (IXT.
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