IXTI76N25T, IXTP76N25T Datasheet - IXYS

IXTI76N25T - Power MOSFET

TrenchTM Power MOSFET N-Channel Enhancement Mode IXTA76N25T IXTP76N25T IXTQ76N25T IXTH76N25T VDSS = ID25 = RDS(on)  250V 76A 44m Typical Avalanched BV = 300V TO-263 AA (IXTA) TO-220AB (IXTP) TO-3P (IXTQ) G S D (Tab) GD S D (Tab) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 250 V 250 V  20 V  30 V TC = 25C TC = 25C, Pulse Width Limite

IXTI76N25T Features

* Avalanche Rated

* High Current Handling Capability

* Fast Intrinsic Rectifier

* Low RDS(on) Advantages

* Easy to Mount

* Space Savings

* High Power Density Applications

* DC-DC Converters

* Battery Chargers

* Switch-Mode and Resonant-Mode Power Supplies

IXTP76N25T_IXYS.pdf