IXTL2N450 High Voltage Power MOSFET

IXYS

Description

High Voltage Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode IXTL2N450 VDSS ID25 RDS(on) = 4500V = 2A  20 ISOPLUS i5-PakTM .

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Datasheet Specifications

Part number: IXTL2N450
Manufacturer: IXYS
File Size: 151.80 KB
Datasheet: IXTL2N450-IXYS.pdf
Description: High Voltage Power MOSFET

Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Mounting Surface
* 4000V~ RMS Electrical Isolation
* Molding Epoxies meet UL 94 V-0 Flammability Classification Advantages
* Easy to Mount
* Space Savings

Applications

* High Voltage Power Supplies
* Capacitor Discharge Applications
* Pulse Circuits
* Laser and X-Ray Generation Systems © 2013 IXYS CORPORATION, All Rights Reserved DS100458B(9/13) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 60V, ID = 0.5
* I

IXTL2N450 Distributors

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IXTL2N450 High Voltage Power MOSFET IXYS

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