IXTL2N470 High Voltage Power MOSFET

IXYS

Description

High Voltage Power MOSFET (Electrically Isolated Tab) Advance Technical Information IXTL2N470 VDSS I D25 RDS(on) = 4700V = 2A  20 N-Channel En.

📥 Download Datasheet

IXTL2N470 Datasheet Preview — Preview of IXTL2N470 PDF

Datasheet Specifications

Part number: IXTL2N470
Manufacturer: IXYS
File Size: 165.08 KB
Datasheet: IXTL2N470-IXYS.pdf
Description: High Voltage Power MOSFET

Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Mounting Surface
* 4000V~ RMS Electrical Isolation
* Molding Epoxies meet UL 94 V-0 Flammability Classification Advantages
* Easy to Mount
* Space Savings

Applications

* High Voltage Power Supplies
* Capacitor Discharge Applications
* Pulse Circuits
* Laser and X-Ray Generation Systems © 2016 IXYS CORPORATION, All Rights Reserved DS100759(11/16) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 60V, ID = 0.5

IXTL2N470 Distributors

📁 Related Datasheet

IXTL2x220N075T IXTA05N100 IXTA08N100P IXTA08N50D2 IXTA100N04T2 IXTA102N15T

📌 All Tags

IXTL2N470 High Voltage Power MOSFET IXYS

IXYS IXTL2N470-like datasheet