* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Mounting Surface
* 4000V~ RMS Electrical Isolation
* Molding Epoxies meet UL 94 V-0 Flammability Classification Advantages
* Easy to Mount
* Space Savings
* High Power Density Applications
* High Voltage
IXTL2N470 Datasheet (165.08 KB)
IXTL2N470
IXYS
165.08 KB
High voltage power mosfet.
High Voltage Power MOSFET (Electrically Isolated Tab) Advance Technical Information IXTL2N470 VDSS I D25 RDS(on) = 4700V = 2A 20 N-Channel En.
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