IXTL2N470 Datasheet (IXYS) - High Voltage Power MOSFET

IXTL2N470, High Voltage Power MOSFET

High Voltage Power MOSFET (Electrically Isolated Tab) Advance Technical Information IXTL2N470 VDSS I D25 RDS(on) = 4700V = 2A  20 N-Channel Enhancement Mode ISOPLUS i5-PakTM Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD FC VISOL Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 4700 V 4700 V 20 V 30 V TC = 25C TC = 25C, Pulse Width Limited by TJM 2 A 8 A TC = 25C 220 W - 55 +150 C 150

IXTL2N470 Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate

* Isolated Mounting Surface

* 4000V~ RMS Electrical Isolation

* Molding Epoxies meet UL 94 V-0 Flammability Classification Advantages

* Easy to Mount

* Space Savings

* High Power Density Applications

* High Voltage