IXTN600N04T2 Datasheet - IXYS

IXTN600N04T2, Power MOSFET

TrenchT2TM GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTN600N04T2 VDSS ID25 = = RDS(on) ≤ 40V 600A 1.

IXTN600N04T2_IXYS.pdf

IXTN600N04T2 Datasheet Preview — Preview of IXTN600N04T2 PDF

Datasheet Details

Part number:

IXTN600N04T2

Manufacturer:

IXYS

File Size:

196.05 KB

Description:

Power MOSFET

Features

* z z Mounting Torque Terminal Connection Torque z z z z z z International Standard Package miniBLOC, with Aluminium Nitride Isolation 175°C Operating Temperature Isolation Voltage 2500 V~ High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages Symbol Test Cond

Applications

* z z z 10 μA 1 mA 1.3 mΩ VGS = 10V, ID = 100A, Note 1 DC-DC Converters and Off-Line UPS Primary-Side Switch High Speed Power Switching Applications © 2012 IXYS CORPORATION, All Rights Reserved DS100172B(10/12) Free Datasheet http://www. datasheet4u. com/ IXTN600N04T2 Symbol Test Conditions (TJ =

IXTN600N04T2 Distributors

📁 Related Datasheet

IXTN21N100 IXTA05N100 IXTA08N100P IXTA08N50D2 IXTA100N04T2 IXTA102N15T

📌 All Tags

IXTN600N04T2 Power MOSFET IXYS

IXYS IXTN600N04T2-like datasheet