Datasheet Specifications
- Part number
- IXTN600N04T2
- Manufacturer
- IXYS
- File Size
- 196.05 KB
- Datasheet
- IXTN600N04T2_IXYS.pdf
- Description
- Power MOSFET
Description
TrenchT2TM GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTN600N04T2 VDSS ID25 = = RDS(on) ≤ 40V 600A 1.
Features
* z z Mounting Torque Terminal Connection Torque z z z z z z International Standard Package miniBLOC, with Aluminium Nitride Isolation 175°C Operating Temperature Isolation Voltage 2500 V~ High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages Symbol Test CondApplications
* z z z 10 μA 1 mA 1.3 mΩ VGS = 10V, ID = 100A, Note 1 DC-DC Converters and Off-Line UPS Primary-Side Switch High Speed Power Switching Applications © 2012 IXYS CORPORATION, All Rights Reserved DS100172B(10/12) Free Datasheet http://www. datasheet4u. com/ IXTN600N04T2 Symbol Test Conditions (TJ =IXTN600N04T2 Distributors
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