IXTN62N50L Datasheet - IXYS

IXTN62N50L Power MOSFET

LinearTM Power MOSFET w/Extended FBSOA N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTN62N50L VDSS ID25 RDS(on) = 500V = 62A ≤ 100mΩ miniBLOC E153432 S G Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C Maximum Ratings 500 500 ± 30 ± 40 62 150 80 5 800 -55 +150 150 -55 +150 V V V .

IXTN62N50L Features

* z z z S D G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal. 50/60 Hz, RMS, t = 1minute IISOL ≤ 1mA, t = 1s Mounting Torque for Base Plate Terminal Connection Torque 2500 3000 1.5/13 1.3/11.5 30 z z z z z Int

IXTN62N50L_IXYS.pdf