IXTN660N04T4 Datasheet - IXYS

IXTN660N04T4 Power MOSFET

TrenchT4TM Power MOSFET Advance Technical Information IXTN660N04T4 D VDSS = ID25 = RDS(on)  40V 660A 0.85m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S S miniBLOC, SOT-227 E153432 Symbol VDSS VDGR VGSM ID25 IL(RMS) IDM IA EAS PD TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Transient TC = 25C (Chip Capability) External Lead Current Limit TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C 50/60 Hz,.

IXTN660N04T4 Features

* International Standard Package

IXTN660N04T4-IXYS.pdf