IXTP12N50PM Datasheet - IXYS

IXTP12N50PM Power MOSFET

PolarTM Power MOSFET IXTP12N50PM (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ =150°C TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque Maximum Ratings .

IXTP12N50PM Features

* Plastic overmolded tab for electrical isolation International standard package Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Easy to mount Space savings © 2008 IXYS CORPORATION, All rights reserved DS99448F(04/08) Symbol gfs Ciss Coss C

IXTP12N50PM-IXYS.pdf