IXTP14N60PM Datasheet - IXYS

IXTP14N60PM Power MOSFET

PolarHVTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTP14N60PM VDSS = ID25 = RDS(on) ≤ 600V 7A 550mΩ OVERMOLDED (IXTPM) OUTLINE Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ =150°C TC = 25°C 1.6 mm (0.062 in.) fro.

IXTP14N60PM Features

* Plastic overmolded tab for electrical isolation International standard package Avalanche rated Fast Intrinsic Diode Low package inductance Advantages Easy to mount Space savings Applications: Switched-mode and resonant-mode power supplies DC-DC Converters Laser Drivers AC and DC motor drives Robotic

IXTP14N60PM-IXYS.pdf