IXTR90P10P Datasheet - IXYS

IXTR90P10P Power MOSFET

PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTR90P10P D G S VDSS = ID25 RDS(on) = ≤ - 100V - 57A 27mΩ ISOPLUS247 E153432 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s 50/60 .

IXTR90P10P Features

* z Silicon Chip on Direct-Copper Bond (DCB) Substrate - UL Recognized Package - Isolated Mounting Surface - 2500V~ Electrical Isolation z Avalanche Rated z High Current Handling Capability z Fast Intrinsic Diode z The Rugged PolarPTM Process z Low QG z Low Drain-to-Tab capacitance z Low Package Induc

IXTR90P10P Datasheet (144.18 KB)