* z Silicon Chip on Direct-Copper Bond (DCB) Substrate - UL Recognized Package - Isolated Mounting Surface - 2500V~ Electrical Isolation z Avalanche Rated z High Current Handling Capability z Fast Intrinsic Diode z The Rugged PolarPTM Process z Low QG z Low Drain-to-Tab capacitance z Low Package Induc
IXTR90P10P Datasheet (144.18 KB)
IXTR90P10P
IXYS
144.18 KB
Power mosfet.
PolarPTM Power MOSFET
P-Channel Enhancement Mode Avalanche Rated
IXTR90P10P
D G
S
VDSS =
ID25 RDS(on)
= ≤
- 100V - 57A
27mΩ
ISOPLUS247 E153432
.
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