Datasheet Specifications
- Part number
- IXTR90P10P
- Manufacturer
- IXYS
- File Size
- 144.18 KB
- Datasheet
- IXTR90P10P-IXYS.pdf
- Description
- Power MOSFET
Description
PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTR90P10P D G S VDSS = ID25 RDS(on) = ≤ - 100V - 57A 27mΩ ISOPLUS247 E153432 .
Features
* z Silicon Chip on Direct-Copper Bond (DCB) Substrate - UL Recognized Package - Isolated Mounting Surface - 2500V~ Electrical Isolation z Avalanche Rated z High Current Handling Capability z Fast Intrinsic Diode z The Rugged PolarPTM Process z Low QG z Low Drain-to-Tab capacitance z Low Package InducApplications
* z High-Side Switches z Push Pull Amplifiers z DC Choppers z Automatic Test Equipment z Current Regulators © 2013 IXYS CORPORATION, All Rights Reserved DS99985B(01/13) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs VDS = -10V, ID = - 45A, Note 1 Ciss Coss Crss VGS = 0V, VDIXTR90P10P Distributors
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