* z Silicon chip on Direct-Copper Bond (DCB) Substrate - UL Recognized Package - Isolated Mounting Surface - 2500V~ Electrical Isolation z Avalanche Rated z Fast Intrinsic Diode z The Rugged PolarPTM Process z Low QG z Low Drain-to-Tab Capacitance z Low Package Inductance Advantages z Easy to Mount z
IXTR90P20P Datasheet (137.39 KB)
IXTR90P20P
IXYS
137.39 KB
Power mosfet.
PolarPTM Power MOSFET
P-Channel Enhancement Mode Avalanche Rated
IXTR90P20P
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS
dv/dt
PD TJ TJM Tstg TL TSOLD.
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