Datasheet Specifications
- Part number
- IXTR90P20P
- Manufacturer
- IXYS
- File Size
- 137.39 KB
- Datasheet
- IXTR90P20P-IXYS.pdf
- Description
- Power MOSFET
Description
PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTR90P20P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD.
Features
* z Silicon chip on Direct-Copper Bond (DCB) Substrate - UL Recognized Package - Isolated Mounting Surface - 2500V~ Electrical Isolation z Avalanche Rated z Fast Intrinsic Diode z The Rugged PolarPTM Process z Low QG z Low Drain-to-Tab Capacitance z Low Package Inductance Advantages z Easy to Mount zApplications
* z High-Side Switches z Push Pull Amplifiers z DC Choppers z Automatic Test Equipment z Current Regulators © 2013 IXYS CORPORATION, All Rights Reserved DS99932C(01/13) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs VDS = -10V, ID = - 45A, Note 1 Ciss Coss Crss VGS = 0V, VDIXTR90P20P Distributors
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