IXTU2N80P Datasheet, MOSFET, IXYS

IXTU2N80P Features

• Mosfet
• International Standard Packages
• Low QG
• Avalanche Rated
• Low Package Inductance
• Fast Intrinsic Rectifier Advantages
• High Power

PDF File Details

Part number:

IXTU2N80P

Manufacturer:

IXYS

File Size:

832.70kb

Download:

📄 Datasheet

Description:

Power mosfet.

IXTU2N80P Application

• Applications VGS(th) IGSS IDSS RDS(on) VDS = VGS, ID = 50μA VGS = 30V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 125C VGS = 10V, ID = 0.5

TAGS

IXTU2N80P

IXYS

📁 Related Datasheet

IXTU2N80P - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTU2N80P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6Ω@VGS=10V ·Fully characterized avalanche voltage .

IXTU01N100 - Power MOSFET (IXYS Corporation)
High Voltage Power MOSFET IXTU01N100 IXTY01N100 VDSS = ID25 =  RDS(on) 1000V 100mA 80 N-Channel Enhancement Mode TO-251 (IXTU) Symbol VDSS VDG.

IXTU01N100D - N-Channel MOSFET (IXYS Corporation)
Depletion Mode MOSFET N-Channel IXTY01N100D IXTU01N100D IXTP01N100D D G S Symbol VDSX VDGX VGSX VGSM IDM PD TJ TJM Tstg TL TSOLD Md Weight Test Co.

IXTU01N80 - Power MOSFET (IXYS Corporation)
.. High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N80 IXTY 01N80 VDSS ID25 RDS(on) = 800 V = 100mA = 50 Ω Preliminary da.

IXTU02N50D - Power MOSFET (IXYS Corporation)
High Voltage Power MOSFET N-Channel IXTY02N50D IXTU02N50D IXTP02N50D D VDSX = ID25 =  RDS(on) 500V 200mA 30 TO-252 (IXTY) G S Symbol VDSX V.

IXTU05N100 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTU05N100 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 17Ω@VGS=10V ·Fully characterized avalanche voltag.

IXTU05N100 - Power MOSFET (IXYS)
High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU05N100 IXTY05N100 VDSS = ID25 =  RDS(on) 1000V 750mA 17 TO-251 (IXTU) .

IXTU12N06T - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 85mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot varia.

IXTU12N06T - Power MOSFET (IXYS)
Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU12N06T IXTY12N06T VDSS = ID25 = RDS(on) ≤ .

IXTU1N80P - Power MOSFET (IXYS)
Preliminary Technical Information PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA1N80P IXTP1N80P IXTU1N80P IXTY1N80P VDSS = ID.