IXXN200N60B3H1 Datasheet - IXYS

IXXN200N60B3H1 600V IGBT

Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/Diode IXXN200N60B3H1 Extreme Light Punch Through IGBT for 10-30kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C (Chip Capability) TC = 110°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 1Ω Clamped Inductive Load VGE = 15V, VCE = 360V.

IXXN200N60B3H1 Features

* z Silicon Chip on Direct-Copper Bond (DCB) Substrate z miniBLOC, with Aluminium Nitride Isolation z Optimized for Low Conduction and Switching Losses z Isolated Mounting Surface z Anti-Parallel Ultra Fast Diode z 2500V~ Electrical Isolation z Optimized for 10-30kHz Switching z Avalanche Rated z Shor

IXXN200N60B3H1-IXYS.pdf