* z Silicon Chip on Direct-Copper Bond (DCB) Substrate z miniBLOC, with Aluminium Nitride Isolation z Optimized for Low Conduction and Switching Losses z Isolated Mounting Surface z Anti-Parallel Ultra Fast Diode z 2500V~ Electrical Isolation z Optimized for 10-30kHz Switching z Avalanche Rated z Shor
IXXN200N60B3H1 Datasheet (195.52 KB)
IXXN200N60B3H1
IXYS
195.52 KB
600v igbt.
Preliminary Technical Information
XPTTM 600V IGBT GenX3TM w/Diode
IXXN200N60B3H1
Extreme Light Punch Through IGBT for 10-30kHz Switching
Symbol VC.
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1.80.
