Datasheet Specifications
- Part number
- IXXN200N60B3H1
- Manufacturer
- IXYS
- File Size
- 195.52 KB
- Datasheet
- IXXN200N60B3H1-IXYS.pdf
- Description
- 600V IGBT
Description
Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/Diode IXXN200N60B3H1 Extreme Light Punch Through IGBT for 10-30kHz Switching Symbol VC.
Features
* z Silicon Chip on Direct-Copper Bond (DCB) Substrate z miniBLOC, with Aluminium Nitride Isolation z Optimized for Low Conduction and Switching Losses z Isolated Mounting Surface z Anti-Parallel Ultra Fast Diode z 2500V~ Electrical Isolation z Optimized for 10-30kHz Switching z Avalanche Rated z ShorApplications
* z Power Inverters z UPS z Motor Drives z SMPS z PFC Circuits z Battery Chargers z Welding Machines z Lamp Ballasts © 2013 IXYS CORPORATION, All Rights Reserved DS100471A(02/13) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE =IXXN200N60B3H1 Distributors
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