IXXN200N65A4 Datasheet - IXYS

IXXN200N65A4 Extreme Light Punch Through IGBT

Preliminary Technical Information XPTTM 650V IGBT GenX4TM Extreme Light Punch Through IGBT for 5-20kHz Switching IXXN200N65A4 VCES = 650V IC110 = 200A V CE(sat)  1.80V tfi(typ) = 123ns Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 ICM SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C (Chip Capability) Leads Current Limit TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 2 Clamp.

IXXN200N65A4 Features

* Optimized for Low Conduction and Switching Losses

* miniBLOC, with Aluminium Nitride Isolation

* International Standard Package

* Isolation Voltage 2500V~

* Optimized for 5-20kHz Switching

* Square RBSOA

* Short Circuit Capability

* High Current Handling Capability

IXXN200N65A4-IXYS.pdf