IXXN200N60B3 Datasheet - IXYS

IXXN200N60B3 Extreme Light Punch Through IGBT

Preliminary Technical Information XPTTM 600V IGBT GenX3TM Extreme Light Punch Through IGBT for 10-30kHz Switching IXXN200N60B3 E VCES = IC110 = V ≤ CE(sat) tfi(typ) = 600V 160A 1.7V 110ns Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ Continuous Transient TC = 25°C (Chip Capability ) Leads Current Limit TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGEC= 15V, TVJ.

IXXN200N60B3 Features

* z Optimized for Low Conduction and Switching Losses z miniBLOC, with Aluminium Nitride Isolation z International Standard Package z Isolation Voltage 2500V~ z Optimized for 10-30kHz Switching z Square RBSOA z Avalanche Rated z Short Circuit Capability z High Current Handling Capability Advantages z

IXXN200N60B3-IXYS.pdf