IXXN200N60C3H1 Extreme Light Punch Through IGBT

IXYS

Description

Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/ Sonic Diode Extreme Light Punch Through IGBT for 20-60kHz Switching IXXN200N60C3H1 E S.

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Datasheet Specifications

Part number: IXXN200N60C3H1
Manufacturer: IXYS
File Size: 209.13 KB
Datasheet: IXXN200N60C3H1-IXYS.pdf
Description: Extreme Light Punch Through IGBT

Features

* z Silicon Chip on Direct-Copper Bond (DCB) Substrate z miniBLOC, with Aluminium Nitride Isolation z Optimized for Low Switching Losses z Isolated Mounting Surface z Anti-Parallel Sonic Diode z 2500V~ Electrical Isolation z Optimized for 20-60kHz Switching z Avalanche Rated z Short Circuit Capability

Applications

* z Power Inverters z UPS z Motor Drives z SMPS z PFC Circuits z Battery Chargers z Welding Machines z Lamp Ballasts © 2013 IXYS CORPORATION, All Rights Reserved DS100511A(02/13) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs IC = 60A, VCE = 10V, Note 1 C ies Coes Cres VCE =

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