* z Silicon Chip on Direct-Copper Bond (DCB) Substrate z miniBLOC, with Aluminium Nitride Isolation z Optimized for Low Switching Losses z Isolated Mounting Surface z Anti-Parallel Sonic Diode z 2500V~ Electrical Isolation z Optimized for 20-60kHz Switching z Avalanche Rated z Short Circuit Capability
IXXN200N60C3H1 Datasheet (209.13 KB)
IXXN200N60C3H1
IXYS
209.13 KB
Extreme light punch through igbt.
Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/ Sonic Diode Extreme Light Punch Through IGBT for 20-60kHz Switching IXXN200N60C3H1 E S.
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