IXXN200N60C3H1 - Extreme Light Punch Through IGBT

IXYS

Datasheet Details

z Silicon Chip on Direct-Copper Bond (DCB) Substrate z miniBLOC, with Aluminium Nitride Isolation z Optimized for Low Switching Losses z Isolated Mounting Surface z Anti-Parallel Sonic Diode z 2500V~ Electrical Isolation z Optimized for 20-60kHz Switching z Avalanche Rated z Short Circuit Capability z Very High Current Capability z Square RBSOA Advantages z High Power Density z Low Gate Drive Requirement.

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