IXXN100N60B3H1 Datasheet - IXYS

IXXN100N60B3H1 Extreme Light Punch Through IGBT

XPTTM 600V IGBT GenX3TM w/ Diode IXXN100N60B3H1 Extreme Light Punch Through IGBT for 10-30kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC90 IF110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C (Chip Calability) TC = 90°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 2Ω Clamped Inductive Load VGE = 15V, VCE = 360V, TJ = 150°C RG = 10Ω, Non Repetitiv.

IXXN100N60B3H1 Features

* z Optimized for Low Switching Losses z International Standard Package z Square RBSOA z Isolation Voltage 2500V~ z Anti-Parallel Ultra Fast Diode z Optimized for 10-30kHz Switching z Avalanche Rated z Short Circuit Capability z High Current Handling Capability Advantages z High Power Density z Low Ga

IXXN100N60B3H1-IXYS.pdf