IXYH24N170C High Voltage IGBT

IXYS

IXYH24N170C Description

High Voltage XPTTM IGBT Preliminary Technical Information IXYH24N170C VCES = 1700V IC110 = 24A V CE(sat)  4.0V tfi(typ) = 78ns TO-247 AD .

IXYH24N170C Features

* High Voltage Package
* High Blocking Voltage
* Low Saturation Voltage Advantages
* Low Gate Drive Requirement
* High Power Density Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, V

IXYH24N170C Applications

* Switch-Mode and Resonant-Mode Power Supplies
* Uninterruptible Power Supplies (UPS)
* Laser Generators
* Capacitor Discharge Circuits
* AC Switches © 2017 IXYS CORPORATION, All Rights Reserved. DS100787A(7/17) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gf

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IXYH24N170C Datasheet Preview — Preview of IXYH24N170C PDF

Datasheet Details

Part number: IXYH24N170C
Manufacturer: IXYS
File Size: 210.69 KB
Datasheet: IXYH24N170C-IXYS.pdf
Description: High Voltage IGBT

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High Voltage IGBT IXYS

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