Datasheet4U Logo Datasheet4U.com

IXYH24N170CV1 High Voltage IGBT

IXYH24N170CV1 Description

High Voltage XPTTM IGBT w/ Diode Preliminary Technical Information IXYH24N170CV1 VCES = 1700V IC110 = 24A V CE(sat)  4.0V tfi(typ) = 78ns .

IXYH24N170CV1 Features

* High Voltage Package
* High Blocking Voltage
* Low Saturation Voltage Advantages
* Low Gate Drive Requirement
* High Power Density Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, V

IXYH24N170CV1 Applications

* Switch-Mode and Resonant-Mode Power Supplies
* Uninterruptible Power Supplies (UPS)
* Laser Generators
* Capacitor Discharge Circuits
* AC Switches © 2017 IXYS CORPORATION, All Rights Reserved. DS100788A(7/17) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gf

📥 Download Datasheet

Preview of IXYH24N170CV1 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
IXYH24N170CV1
Manufacturer
IXYS
File Size
218.72 KB
Datasheet
IXYH24N170CV1-IXYS.pdf
Description
High Voltage IGBT

📁 Related Datasheet

📌 All Tags

High Voltage IGBT IXYS
IXYS IXYH24N170CV1-like datasheet