IXYH24N90C3D1 Datasheet - IXYS

IXYH24N90C3D1 High-Speed IGBT

900V XPTTM IGBT GenX3TM w/Diode High-Speed IGBT for 20-50 kHz Switching Preliminary Technical Information IXYH24N90C3D1 VCES = 900V IC90 = 24A V CE(sat)  3.0V tfi(typ) = 90ns Symbol VCES VCGR VGES VGEM IC25 IC90 IF110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient TC = 25°C TC = 90° TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 125°C, RG = 10 Clamped Inductive Load TC .

IXYH24N90C3D1 Features

* Optimized for Low Switching Losses

* Square RBSOA

* Positive Thermal Coefficient of Vce(sat)

* Anti-Parallel Ultra Fast Diode

* Avalanche Rated

* High Current Handling Capability

* International Standard Package Advantages

* High Power Density

* Low Gate Drive R

IXYH24N90C3D1-IXYS.pdf