* Optimized for Low Switching Losses
* Square RBSOA
* Positive Thermal Coefficient of Vce(sat)
* Anti-Parallel Ultra Fast Diode
* Avalanche Rated
* High Current Handling Capability
* International Standard Package Advantages
* High Power Density
* Low Gate Drive R
IXYH24N90C3D1 Datasheet (377.98 KB)
IXYH24N90C3D1
IXYS
377.98 KB
High-speed igbt.
900V XPTTM IGBT GenX3TM w/Diode High-Speed IGBT for 20-50 kHz Switching Preliminary Technical Information IXYH24N90C3D1 VCES = 900V IC90 = 24A V .
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