* z Optimized for Low Switching Losses z Square RBSOA z Positive Thermal Coefficient of Vce(sat) z International Standard Package Advantages z High Power Density z Low Gate Drive Requirement Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 2
IXYH40N90C3 Datasheet (160.69 KB)
IXYH40N90C3
IXYS
160.69 KB
Igbt.
900V XPTTM IGBT GenX3TM High-Speed IGBT for 20-50 kHz Switching Preliminary Technical Information IXYH40N90C3 VCES = IC110 = V ≤CE(sat) tfi(typ) = .
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