IXYH40N90C3D1 Datasheet (IXYS)

IXYH40N90C3D1, IGBT

900V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching Preliminary Technical Information IXYH40N90C3D1 VCES = IC110 = V ≤CE(sat) tfi(typ) = 900V 40A 2.5V 110ns Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TTCC = 110°C = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 5Ω Clamped Inductive Load TC = 25°C Maximum Lead Tem

IXYH40N90C3D1 Features

* z Optimized for Low Switching Losses z Square RBSOA z Positive Thermal Coefficient of Vce(sat) z Anti-Parallel Ultra Fast Diode z High Current Handling Capability z International Standard Package Advantages z High Power Density z Low Gate Drive Requirement Applications z High Frequency Power Inverte