* z Optimized for Low Switching Losses z Square RBSOA z Positive Thermal Coefficient of Vce(sat) z Anti-Parallel Ultra Fast Diode z High Current Handling Capability z International Standard Package Advantages z High Power Density z Low Gate Drive Requirement Applications z High Frequency Power Inverte
IXYH40N90C3D1 Datasheet (179.05 KB)
IXYH40N90C3D1
IXYS
179.05 KB
Igbt.
900V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching Preliminary Technical Information IXYH40N90C3D1 VCES = IC110 = V ≤CE(sat) .
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