* Optimized for Low Switching Losses
* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Mounting Surface
* 2500V~ Electrical Isolation
* Square RBSOA
* Positive Thermal Coefficient of Vce(sat)
* Anti-Parallel Ultra Fast Diode
* Avalanche Rated Advantages
IXYJ20N120C3D1 Datasheet (220.93 KB)
IXYJ20N120C3D1
IXYS
220.93 KB
Igbt.
1200V XPTTM IGBT GenX3TM w/ Diode
(Electrically Isolated Tab)
High-Speed IGBT for 20-50 kHz Switching
IXYJ20N120C3D1
Symbol
VCES VCGR
VGES VGEM
IC25.
📁 Related Datasheet
IXYJ30N120C3D1 IGBT (IXYS)
IXYA12N250CHV High Voltage IGBT (IXYS)
IXYA15N65C3D1 IGBT (IXYS)
IXYA20N120A4HV IGBT (IXYS)
IXYA20N120B4HV IGBT (IXYS)
IXYA20N120C3HV 1200V XPT GenX3 IGBTs (IXYS Corporation)
IXYA20N120C4HV IGBT (IXYS)
IXYA20N65B3 IGBT (IXYS)
IXYA20N65C3 IGBT (IXYS)
IXYA20N65C3D1 IGBT (IXYS)
