Datasheet4U.com

IXYJ30N120C3D1 - IGBT

Product Overview

IXYS

📥 Download Datasheet

IXYJ30N120C3D1 IGBT by IXYS - Datasheet Preview — Datasheet preview – IXYJ30N120C3D1

Datasheet Details

Part number	IXYJ30N120C3D1
Manufacturer	IXYS
File Size	219.30 KB
Description	IGBT
Datasheet	IXYJ30N120C3D1 Datasheet
Additional preview pages of the IXYJ30N120C3D1 datasheet.

Product details

Features

Optimized for Low Switching Losses.
Silicon Chip on Direct-Copper Bond (DCB) Substrate.
Isolated Mounting Surface.
2500V~ Electrical Isolation.
Square RBSOA.
Positive Thermal Coefficient of Vce(sat).
Anti-Parallel Ultra Fast Diode.
Avalanche Rated Advantages.
High Power Density.
Low Gate Drive Requirement Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCE.

📁 Similar Datasheet

IXYA20N120C3HV - 1200V XPT GenX3 IGBTs (IXYS Corporation)
IXYB82N120C3H1 - High-Speed IGBT (IXYS Corporation)
IXYH20N120C3 - 1200V XPT GenX3 IGBTs (IXYS Corporation)
IXYH50N120C3 - High-Speed IGBT (IXYS Corporation)
IXYH50N120C3D1 - High-Speed IGBT (IXYS Corporation)
IXYH82N120C3 - 1200V XPT IGBT (IXYS Corporation)
IXYP20N120C3 - 1200V XPT GenX3 IGBTs (IXYS Corporation)

Other Datasheets by IXYS

Published: Aug 19, 2016 |