IXYJ30N120C3D1 Datasheet - IXYS

IXYJ30N120C3D1 IGBT

Advance Technical Information 1200V XPTTM GenX3TM IGBT w/ Diode (Electrically Isolated Tab) High-Speed IGBT for 20-50 kHz Switching IXYJ30N120C3D1 Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md VISOL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient TC = 25°C TTCC = 110°C = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 10 Clamped Inductive Load TC = 25°C Maximum Lead T.

IXYJ30N120C3D1 Features

* Optimized for Low Switching Losses

* Silicon Chip on Direct-Copper Bond (DCB) Substrate

* Isolated Mounting Surface

* 2500V~ Electrical Isolation

* Square RBSOA

* Positive Thermal Coefficient of Vce(sat)

* Anti-Parallel Ultra Fast Diode

* Avalanche Rated Advantages

IXYJ30N120C3D1-IXYS.pdf