* Optimized for Low Switching Losses
* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Mounting Surface
* 2500V~ Electrical Isolation
* Square RBSOA
* Positive Thermal Coefficient of Vce(sat)
* Anti-Parallel Ultra Fast Diode
* Avalanche Rated Advantages
IXYJ30N120C3D1 Datasheet (219.30 KB)
IXYJ30N120C3D1
IXYS
219.30 KB
Igbt.
Advance Technical Information
1200V XPTTM GenX3TM IGBT w/ Diode
(Electrically Isolated Tab)
High-Speed IGBT for 20-50 kHz Switching
IXYJ30N120C3D1
.
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