IXYL40N250CV1 High Voltage IGBT

IXYS

Description

High Voltage XPTTM IGBT w/ Diode (Electrically Isolated Tab) Advance Technical Information IXYL40N250CV1 VCES = 2500V IC110 = 40A V CE(sat)  .

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Datasheet Specifications

Part number: IXYL40N250CV1
Manufacturer: IXYS
File Size: 236.05 KB
Datasheet: IXYL40N250CV1-IXYS.pdf
Description: High Voltage IGBT

Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Mounting Surface
* 4500V~ Electrical Isolation
* High Voltage Package
* High Blocking Voltage
* High Peak Current Capability
* Low Saturation Voltage Advantages
* Low Gate Drive Requirement
* High Pow

Applications

* UPS
* Motor Drives
* SMPS
* PFC Circuits
* High Frequency Power Inverters © 2017 IXYS CORPORATION, All Rights Reserved DS100815B(5/17) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs IC = 40A, VCE = 10V, Note 1 RGi Gate Input Resistance Cies Coes Cres

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IXYL40N250CV1 High Voltage IGBT IXYS

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