IXYL40N250CV1 Datasheet - IXYS

IXYL40N250CV1 High Voltage IGBT

High Voltage XPTTM IGBT w/ Diode (Electrically Isolated Tab) Advance Technical Information IXYL40N250CV1 VCES = 2500V IC110 = 40A V CE(sat)  4.0V tfi(typ) = 134ns Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD FC VISOL Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C TC = 110°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 1 Clamped Inductive Load TC = 25°C Maximum Lead Temperature.

IXYL40N250CV1 Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate

* Isolated Mounting Surface

* 4500V~ Electrical Isolation

* High Voltage Package

* High Blocking Voltage

* High Peak Current Capability

* Low Saturation Voltage Advantages

* Low Gate Drive Requirement

* High Pow

IXYL40N250CV1 Datasheet (236.05 KB)