* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Mounting Surface
* 4000V~ Electrical Isolation
* High Blocking Voltage
* High Peak Current Capability
* Low Saturation Voltage Advantages
* Low Gate Drive Requirement
* High Power Density Applications
IXYL60N450 Datasheet (632.01 KB)
IXYL60N450
IXYS
632.01 KB
High voltage igbt.
High Voltage XPTTM IGBT (Electrically Isolated Tab) IXYL60N450 VCES = 4500V IC110 = 38A V 3.30V CE(sat) Symbol VCES VCGR VGES VGEM IC25 IC110 .
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