Description
900V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching IXYA8N90C3D1 IXYP8N90C3D1 Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM I.
Features
* Optimized for Low Switching Losses
* Square RBSOA
* Positive Thermal Coefficient of
Vce(sat)
* Anti-Parallel Ultra Fast Diode
* Avalanche Rated
* International Standard Packages
Advantages
* High Power Density
Applications
* High Frequency Power Inverters
* UPS
* Motor Drives
* SMPS
* PFC Circuits
* Battery Chargers
* Welding Machines
* Lamp Ballasts
© 2014 IXYS CORPORATION, All Rights Reserved
DS100400C(12/14)
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs IC =