IXYP8N90C3D1, IXYA8N90C3D1 Datasheet - IXYS

IXYP8N90C3D1 IGBT

900V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching IXYA8N90C3D1 IXYP8N90C3D1 Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 900 V 900 V ±20 V ±30 V TC = 25°C TC = 110°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 30 Clamped Inductive Load TC = 25°C 20 8 12 48 4 15 ICM = 16 @VC.

IXYP8N90C3D1 Features

* Optimized for Low Switching Losses

* Square RBSOA

* Positive Thermal Coefficient of Vce(sat)

* Anti-Parallel Ultra Fast Diode

* Avalanche Rated

* International Standard Packages Advantages

* High Power Density

* Low Gate Drive Requirement Applications

* High Fre

IXYA8N90C3D1-IXYS.pdf