* z Optimized for Low Switching Losses z Square RBSOA z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 2500V~ Electrical Isolation z Positive Thermal Coefficient of Vce(sat) z Avalanche Rated z High Current Handling Capability Advantages z High Power Density z Low Gat
IXYR100N120C3 Datasheet (165.87 KB)
IXYR100N120C3
IXYS
165.87 KB
Igbt.
1200V XPTTM IGBT GenX3TM (Electrically Isolated Tab) High-Speed IGBT for 20-50 kHz Switching IXYR100N120C3 Symbol VCES VCGR VGES VGEM IC25 IC110 ICM.
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