IXYR100N120C3 Datasheet (IXYS)

IXYR100N120C3, IGBT

1200V XPTTM IGBT GenX3TM (Electrically Isolated Tab) High-Speed IGBT for 20-50 kHz Switching IXYR100N120C3 Symbol VCES VCGR VGES VGEM IC25 IC110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ Continuous Transient TC = 25°C (Chip Capability) TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 1Ω Clamped Inductive Load TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s 50/60

IXYR100N120C3 Features

* z Optimized for Low Switching Losses z Square RBSOA z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 2500V~ Electrical Isolation z Positive Thermal Coefficient of Vce(sat) z Avalanche Rated z High Current Handling Capability Advantages z High Power Density z Low Gat