IXYR50N120C3D1 High-Speed IGBT

IXYS

Description

1200V XPTTM IGBT GenX3TM w/ Diode (Electrically Isolated Tab) High-Speed IGBT for 20-50 kHz Switching IXYR50N120C3D1 Symbol VCES VCGR VGES VGEM IC25.

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Datasheet Specifications

Part number: IXYR50N120C3D1
Manufacturer: IXYS
File Size: 195.95 KB
Datasheet: IXYR50N120C3D1-IXYS.pdf
Description: High-Speed IGBT

Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Mounting Surface
* 2500V~ Electrical Isolation
* Optimized for Low Switching Losses
* Square RBSOA
* Positive Thermal Coefficient of Vce(sat)
* Anti-Parallel Ultra Fast Diode
* High Current Handling Capab

Applications

* High Frequency Power Inverters
* UPS
* Motor Drives
* SMPS
* PFC Circuits
* Battery Chargers
* Welding Machines
* Lamp Ballasts © 2016 IXYS CORPORATION, All Rights Reserved DS100492B(3/16) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs IC =

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IXYR50N120C3D1 High-Speed IGBT IXYS

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