IXYT20N120C3D1HV - IGBT
1200V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching IXYT20N120C3D1HV VCES = 1200V IC110 = 17A VCE(sat) 3.4V tfi(typ) = 108ns Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient TC = 25°C TTCC = 110°C = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 10 Clamped Inductive Load TC = 25°C Maximum Lead Tempe
IXYT20N120C3D1HV Features
* Optimized for Low Switching Losses
* Square RBSOA
* Positive Thermal Coefficient of Vce(sat)
* High Voltage Package
* Anti-Parallel Ultra Fast Diode
* Avalanche Rated Advantages
* High Power Density
* Low Gate Drive Requirement Symbol Test Conditions (TJ = 25C,
