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IXYT20N120C3D1HV - IGBT

IXYS

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Datasheet Details

Part number	IXYT20N120C3D1HV
Manufacturer	IXYS
File Size	224.79 KB
Description	IGBT
Datasheet	IXYT20N120C3D1HV-IXYS.pdf

IXYT20N120C3D1HV Product details

Features

Optimized for Low Switching Losses.
Square RBSOA.
Positive Thermal Coefficient of Vce(sat).
High Voltage Package.
Anti-Parallel Ultra Fast Diode.
Avalanche Rated Advantages.
High Power Density.
Low Gate Drive Requirement Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 125C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 20A, VGE = 15V, Note 1.

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Published: Aug 19, 2016 |