IXYT20N120C3D1HV Datasheet - IXYS

IXYT20N120C3D1HV IGBT

1200V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching IXYT20N120C3D1HV VCES = 1200V IC110 = 17A VCE(sat)  3.4V tfi(typ) = 108ns Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient TC = 25°C TTCC = 110°C = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 10 Clamped Inductive Load TC = 25°C Maximum Lead Tempe.

IXYT20N120C3D1HV Features

* Optimized for Low Switching Losses

* Square RBSOA

* Positive Thermal Coefficient of Vce(sat)

* High Voltage Package

* Anti-Parallel Ultra Fast Diode

* Avalanche Rated Advantages

* High Power Density

* Low Gate Drive Requirement Symbol Test Conditions (TJ = 25C,

IXYT20N120C3D1HV-IXYS.pdf