IXYT20N120C3D1HV IGBT

IXYS

Description

1200V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching IXYT20N120C3D1HV VCES = 1200V IC110 = 17A VCE(sat)  3.4V tfi(typ) = 10.

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Datasheet Specifications

Part number: IXYT20N120C3D1HV
Manufacturer: IXYS
File Size: 224.79 KB
Datasheet: IXYT20N120C3D1HV-IXYS.pdf
Description: IGBT

Features

* Optimized for Low Switching Losses
* Square RBSOA
* Positive Thermal Coefficient of Vce(sat)
* High Voltage Package
* Anti-Parallel Ultra Fast Diode
* Avalanche Rated Advantages
* High Power Density
* Low Gate Drive Requirement Symbol Test Conditions (TJ = 25C,

Applications

* High Frequency Power Inverters
* UPS
* Motor Drives
* SMPS
* PFC Circuits
* Battery Chargers
* Welding Machines
* Lamp Ballasts © 2013 IXYS CORPORATION, All Rights Reserved DS100514B(8/13) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs IC = 2

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IXYT20N120C3D1HV IGBT IXYS

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