* Optimized for Low Switching Losses
* Square RBSOA
* Positive Thermal Coefficient of Vce(sat)
* High Voltage Package
* Anti-Parallel Ultra Fast Diode
* Avalanche Rated Advantages
* High Power Density
* Low Gate Drive Requirement Symbol Test Conditions (TJ = 25C,
IXYT20N120C3D1HV Datasheet (224.79 KB)
IXYT20N120C3D1HV
IXYS
224.79 KB
Igbt.
1200V XPTTM IGBT GenX3TM w/ Diode
High-Speed IGBT for 20-50 kHz Switching
IXYT20N120C3D1HV
VCES = 1200V IC110 = 17A VCE(sat) 3.4V tfi(typ) = 10.
📁 Related Datasheet
IXYT25N250CHV - High Voltage IGBT
(IXYS)
High Voltage XPTTM IGBT
IXYT25N250CHV IXYH25N250CHV
VCES = 2500V
IC110 = 25A
VCE(sat) 4.0V
t
= 246ns
fi(typ)
Symbol
VCES V
CGR
VGES VGEM
.
IXYT12N250CV1HV - High Voltage IGBT
(IXYS)
High Voltage XPTTM IGBT w/ Diode
Advance Technical Information
IXYT12N250CV1HV IXYH12N250CV1HV
VCES = 2500V
IC110 = 12A
V CE(sat)
4.50V
t.
IXYT30N450HV - IGBT
(IXYS)
High Voltage XPTTM IGBT
Advance Technical Information
IXYT30N450HV IXYH30N450HV
VCES = IC110 = VCE(sat)
4500V 30A 3.9V
Symbol Test Conditions
.
IXYT30N65C3H1HV - IGBT
(IXYS)
Preliminary Technical Information
XPTTM 650V IGBT GenX3TM w/ Sonic Diode
Extreme Light Punch Through IGBT for 20-60kHz Switching
IXYT30N65C3H1HV IXY.
IXYT40N120A4HV - Ultra Low-Vsat PT IGBT
(IXYS)
1200V XPTTM GenX4TM IGBT
Ultra Low-Vsat PT IGBT for up to 5kHz Switching
IXYT40N120A4HV
VCES = 1200V IC110 = 40A
V 1.80V CE(sat)
tfi(typ) = 220.
IXYT55N120A4HV - Ultra Low-Vsat PT IGBT
(IXYS)
1200V XPTTM GenX4TM IGBT
Ultra Low-Vsat PT IGBT for up to 5kHz Switching
IXYT55N120A4HV
VCES = 1200V IC110 = 55A
V 1.8V CE(sat)
tfi(typ) = 270n.
IXYT80N90C3 - IGBT
(IXYS)
XPTTM 900V IGBT GenX3TM
High-Speed IGBT for 20-50 kHz Switching
IXYT80N90C3 IXYH80N90C3
Symbol
VCES VCGR
VGES VGEM
IICLR25MS IC110 ICM
SSOA (RBSOA)
.
IXYT85N120A4HV - Ultra Low-Vsat PT IGBT
(IXYS)
1200V XPTTM GenX4TM IGBT
Ultra Low-Vsat PT IGBT for up to 5kHz Switching
IXYT85N120A4HV
VCES = 1200V IC110 = 85A
V 1.8V CE(sat)
tfi(typ) = 280n.
