IXYT30N65C3H1HV Datasheet - IXYS

IXYT30N65C3H1HV IGBT

Preliminary Technical Information XPTTM 650V IGBT GenX3TM w/ Sonic Diode Extreme Light Punch Through IGBT for 20-60kHz Switching IXYT30N65C3H1HV IXYH30N65C3H1 VCES = 650V IC110 = 30A VCE(sat)  2.7V tfi(typ) = 24ns TO-268HV Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C TTCC = 110°C = 110°C TC = 25°C, 1ms TC = 25°C TC = .

IXYT30N65C3H1HV Features

* Optimized for 20-60kHz Switching

* Square RBSOA

* High Voltage

* Avalanche Rated

* Short Circuit Capability

* Anti-Parallel Sonic Diode Advantages

* High Power Density

* Extremely Rugged

* Low Gate Drive Requirement Applications

* Power Inverters

* UPS