IXYX200N65B3, IXYK200N65B3 Datasheet - IXYS

IXYX200N65B3 IGBT

Advance Technical Information XPTTM 650V IGBT GenX3TM Extreme Light Punch Through IGBT for 10-30kHz Switching IXYK200N65B3 IXYX200N65B3 VCES = IC110 = VCE(sat)  tfi(typ) = 650V 200A 1.70V 157ns TO-264 (IXYK) Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 650 V 650 V ±20 V ±30 V TC = 25°C (Chip Capability) Termina.

IXYX200N65B3 Features

* International Standard Packages

* Optimized for 10-30kHz Switching

* Square RBSOA

* Avalanche Rated

* Short Circuit Capability

* High Current Handling Capability Advantages

* High Power Density

* Low Gate Drive Requirement Applications

* Power Inverters

IXYK200N65B3-IXYS.pdf