IXYX100N120C3, IXYK100N120C3 Datasheet - IXYS

IXYX100N120C3 High-Speed IGBT

1200V XPTTM IGBT GenX3TM High-Speed IGBT for 20-50 kHz Switching IXYK100N120C3 IXYX100N120C3 VCES = 1200V IC110 = 100A V CE(sat)  3.50V tfi(typ) = 110ns TO-264 (IXYK) Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 1200 V 1200 V ±20 V ±30 V TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 25°C, 1m.

IXYX100N120C3 Features

* Optimized for Low Switching Losses

* Square RBSOA

* Positive Thermal Coefficient of Vce(sat)

* Avalanche Rated

* High Current Handling Capability

* International Standard Packages Advantages

* High Power Density

* Low Gate Drive Requirement Applications

* High F

IXYK100N120C3-IXYS.pdf