IXYX100N65B3D1, IXYK100N65B3D1 Datasheet - IXYS

IXYX100N65B3D1 IGBT

Advance Technical Information XPTTM 650V IGBT GenX3TM w/ Diode IXYK100N65B3D1 IXYX100N65B3D1 Extreme Light Punch Through IGBT for 10-30kHz Switching VCES = IC110 = VCE(sat)  tfi(typ) = 650V 100A 1.85V 73ns TO-264 (IXYK) Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 IF110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 650 V 650 V ±20 V ±30 V TC = 25°C (Chip .

IXYX100N65B3D1 Features

* International Standard Packages

* Optimized for 10-30kHz Switching

* Square RBSOA

* Avalanche Rated

* Short Circuit Capability

* Anti-Parallel Ultra Fast Diode

* High Current Handling Capability Advantages

* High Power Density

* Low Gate Drive Requirement Appl

IXYK100N65B3D1-IXYS.pdf

IXYX100N65B3D1 Datasheet Preview — This datasheet PDF includes multiple part numbers: IXYX100N65B3D1, IXYK100N65B3D1. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IXYX100N65B3D1, IXYK100N65B3D1

Manufacturer:

IXYS

File Size:

223.56 KB

Description:

Igbt.

Note:

This datasheet PDF includes multiple part numbers: IXYX100N65B3D1, IXYK100N65B3D1.
Please refer to the document for exact specifications by model.

IXYX100N65B3D1 Distributor

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IXYX100N65B3D1 IXYK100N65B3D1 IGBT IXYS