IXYX100N65B3D1 Datasheet - IXYS

IXYX100N65B3D1 IGBT

Advance Technical Information XPTTM 650V IGBT GenX3TM w/ Diode IXYK100N65B3D1 IXYX100N65B3D1 Extreme Light Punch Through IGBT for 10-30kHz Switching VCES = IC110 = VCE(sat)  tfi(typ) = 650V 100A 1.85V 73ns TO-264 (IXYK) Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 IF110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 650 V 650 V ±20 V ±30 V TC = 25°C (Chip .

IXYX100N65B3D1 Features

* International Standard Packages

* Optimized for 10-30kHz Switching

* Square RBSOA

* Avalanche Rated

* Short Circuit Capability

* Anti-Parallel Ultra Fast Diode

* High Current Handling Capability Advantages

* High Power Density

* Low Gate Drive Requirement Appl

IXYX100N65B3D1 Datasheet (223.56 KB)