IXYX110N120B4 Datasheet - IXYS

IXYX110N120B4 1200V IGBT

1200V XPTTM Gen 4 IGBT IXYX110N120B4 Extreme Light Punch Through IGBT for 5-30 kHz Switching VCES = 1200V I = 110A C110 V  2.10V CE(sat) tfi(typ) = 130ns Symbol V CES V CGR VGES V GEM IC25 I LRMS I C110 ICM SSOA (RBSOA) PC T J TJM Tstg TL Md Weight Test Conditions Maximum Ratings T = 25°C to 175°C J T J = 25°C to 175°C, R GE = 1M Continuous Transient 1200 V 1200 V ±20 V ±30 V TC = 25°C (Chip Capability) Terminal Current Limit T = 110°C C TC = 25°C, 1ms VGE = 1.

IXYX110N120B4 Features

* Optimized for 5-30kHZ Switching

* Positive Thermal Coefficient of Vce(sat)

* International Standard Package Advantages

* High Power Density

* Low Gate Drive Requirement Applications

* Power Inverters

* UPS

* Motor Drives

* SMPS

* PFC Circuits

* Battery C