IXYX110N120C4 - IGBT
1200V XPTTM Gen 4 IGBT High Speed IGBT for 20-50kHz Switching IXYX110N120C4 Symbol V CES V CGR VGES V GEM IC25 I LRMS I C110 ICM SSOA (RBSOA) PC T J TJM Tstg TL TSOLD FC Weight Test Conditions Maximum Ratings T = 25°C to 175°C J T J = 25°C to 175°C, R GE = 1M Continuous Transient 1200 V 1200 V ±20 V ±30 V TC= 25°C (Chip Capability) Terminal Current Limit T = 110°C C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 2 Clamped Inductive Load TC = 25°C 310 A 160 A 110 A 7
IXYX110N120C4 Features
* Optimized for Low Switching Losses
* Positive Thermal Coefficient of Vce(sat)
* International Standard Package Advantages
* High Power Density
* Low Gate Drive Requirement Applications
* Power Inverters
* UPS
* Motor Drives
* SMPS
* PFC Circuits
* Batter
