* Optimized for Low Conduction Losses
* Positive Thermal Coefficient of Vce(sat)
* International Standard Package Advantages
* High Power Density
* Low Gate Drive Requirement Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th)
IXYX110N120A4 Datasheet (610.22 KB)
IXYX110N120A4
IXYS
610.22 KB
Ultra low-vsat pt igbt.
1200V XPTTM IGBT GenX4TM
Ultra Low-Vsat PT IGBT for up to 5kHz Switching
IXYX110N120A4
VCES = 1200V IC110 = 110A
V 1.80V CE(sat)
tfi(typ) = 300.
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