IXYX110N120A4 Datasheet - IXYS

IXYX110N120A4 Ultra Low-Vsat PT IGBT

1200V XPTTM IGBT GenX4TM Ultra Low-Vsat PT IGBT for up to 5kHz Switching IXYX110N120A4 VCES = 1200V IC110 = 110A V  1.80V CE(sat) tfi(typ) = 300ns Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC= 25°C (Chip Capability) Terminal Current Limit TC= 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 2 Clamped Inductive Load TC = 25°C Maximum Lead Temperature for S.

IXYX110N120A4 Features

* Optimized for Low Conduction Losses

* Positive Thermal Coefficient of Vce(sat)

* International Standard Package Advantages

* High Power Density

* Low Gate Drive Requirement Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th)

IXYX110N120A4-IXYS.pdf